dmp102 2 ufd f d atasheet number: ds 36624 rev. 4 - 2 1 of 6 www.diodes.com may 2015 ? dio des incorporated dm p102 2 uf d f new product 12v p - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = + 25c - 12 v 1 4.8 m ? gs = - 4.5v - 9. 5 a 19 m? @ v gs = - 2.5v - 8.5 a 26 m ? @ v gs = - 1.8 v - 7. 2a 32 m ? @ v gs = - 1.5 v - 6. 6a description this mosfe t is designed specifically for use in battery management applications. features ? C ? 2 ? ? ? ? totally lead - free & full y rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? ? case material: molded plastic, green molding compound. ? ? C ? ordering information (note 4 ) part numb er case packaging dmp102 2 ufd f - 7 u - dfn 2020 - 6 3 ,000/tape & reel dmp102 2 ufd f - 13 u - dfn 2020 - 6 10 ,000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain < 900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com /products/packages.html . marking information date code key year 2011 2012 2 013 2014 2015 201 6 201 7 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d pin out internal schematic p u = product type marking code ym = date code marking y = year (ex: a = 201 3 ) m = month (ex: 9 = september) u - dfn2020 - 6 bottom view p u y m bottom view top view esd protected d s g g ate protection diode e4
dmp102 2 ufd f d atasheet number: ds 36624 rev. 4 - 2 2 of 6 www.diodes.com may 2015 ? dio des incorporated dm p102 2 uf d f new product maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value units drain - source voltage v dss - 12 v gate - source voltage v gss 8 v continuous drain current (note 6 ) v gs = - 4.5 v steady state t a = +25c t a = +70c i d - 9.5 - 7.6 a t<5s t a = +25c t a = +70c i d - 11.0 - 8.8 a pulsed drain curren t ( 10 dm - 90 a continuous source - drain diode current t a = + 25c t c = + 25 c i s - 2.5 - 7.1 a pulsed source - drain diode c urrent ( 10s pulse, duty cycle = 1% sm - 50 a thermal characteristics characteristic symbol value units tota l power dissipation (note 5) t a = +25c p d 0.73 w t a = +70c 0.47 thermal resistance, junction to ambient (note 5) s teady state r ja 172 c/w t<5s 128 total power dissipation (note 6 ) t a = +25c p d 2.1 w t a = +70c 1.3 thermal resistance, ju nction to ambient (note 6 ) s teady state r ja 59 c/w t<5s 45 thermal resistance, junction to case (note 6 ) s teady state r j c 5.1 operating and storage temperature range t j, t stg - 55 to +150 c electrical characteristics ( @t a = +25c, unless othe rwise specified.) characteristic symbol min typ max unit test condition off characteristics ( note 7 ) drain - source breakdown voltage bv dss - 12 gs = 0v, i d = - 250 a j = +25c i dss ds = - 12 v, v gs = 0v gate - source leakage i gss gs = 8 v, v ds = 0v on characteristics ( note 7 ) gate threshold voltage v gs(th) - 0. 35 ds = v gs , i d = - 250 a ds(on) ? gs = - 4. 5 v, i d = - 4a 15 19 v gs = - 2.5v, i d = - 4a 20 26 v gs = - 1.8v, i d = - 4a 23 3 2 v gs = - 1. 5 v, i d = - 2a diode forward voltage v sd gs = 0v, i s = - 8 a dynamic characteristic s (note 8 ) input capacitance c iss ds = - 10 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g gs = - 8 v, v ds = - 6v , i d = - 1 0 a total gate charge q g gs = - 4.5 v, v ds = - 6 v, i d = - 1 0 a gate - source charge q gs gd d(on) ds = - 6 v, v g s = - 4.5 v, r g = 1 d = - 8 a turn - on rise time t r d(off) f notes: 5. device mounted on fr - 4 pc board, with minimum recommended pad layout, singl e sided. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with thermal v ias to bottom layer 1inch square copper plate . 7 . short duration pulse test used to minimize self - heating effect . 8 . guaranteed by design. not subject to production testing .
dmp102 2 ufd f d atasheet number: ds 36624 rev. 4 - 2 3 of 6 www.diodes.com may 2015 ? dio des incorporated dm p102 2 uf d f new product 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -v , drain -source voltage (v) figure 1 typical output characteristics ds - i , d r a i n c u r r e n t ( a ) d v = -2.0v gs v = -2.5v gs v = -8.0v gs v = -4.5v gs v = -1.2v gs v = -1.5v gs v = -1.8v gs 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 -v , gate-source voltage (v) gs figure 2 typical transfer characteristics - i , d r a i n c u r r e n t ( a ) d t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds 0 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 -i , drain source current (a) figure 3 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -1.5v gs v = -1.8v gs v = -2.5v gs v = -4.5v gs 0 0.005 0.01 0.015 0.02 0.025 0.03 0 4 8 12 16 20 -i , drain source current (a) figure 4 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 150 c a ? v = -4.5v gs t = 125 c a ? 0.5 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? figure 5 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = -4.5v i = -10a gs d v = -2.5v i = -5a gs d 0 0.01 0.02 0.03 0.04 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature v = -4.5v i = a gs d -10 v = 5v i = a gs d -2. -5 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ?
dmp102 2 ufd f d atasheet number: ds 36624 rev. 4 - 2 4 of 6 www.diodes.com may 2015 ? dio des incorporated dm p102 2 uf d f new product 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) figure 7 gate threshold variation vs. ambient temperature a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) -i = 1ma d -i = 250a d 0 4 8 12 16 20 0.4 0.6 0.8 1 1.2 -v , source-drain voltage (v) figure 8 diode forward voltage vs. current sd - i , s o u r c e c u r r e n t ( a ) s t = 25 c a ? 0 500 1000 1500 2000 2500 3000 3500 4000 0 3 6 9 12 15 c , j u n c t i o n c a p a c i t a n c e ( p f ) t -v , drain-source voltage (v) figure 9 typical junction capacitance ds c oss c rss f = 1mhz c iss 0 2 4 6 8 0 5 10 15 20 25 30 35 40 45 50 q , total gate charge (nc) figure 10 gate-charge characteristics g - v , g a t e - s o u r c e v o l t a g e ( v ) g s v = -6v i = -10a ds d 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration times (sec) figure 11 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse r (t) = r(t) * r r = 172c/w duty cycle, d = t1/ t2 ?? ? ja ja ja
dmp102 2 ufd f d atasheet number: ds 36624 rev. 4 - 2 5 of 6 www.diodes.com may 2015 ? dio des incorporated dm p102 2 uf d f new product package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. u - dfn2020 - 6 (type f) u - dfn2020 - 6 (type f) dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.03 a3 - - 0.15 b 0.25 0.35 0.30 d 1.95 2.05 2.00 d2 0.85 1.05 0.95 d3 0.33 0.43 0.38 e 0.65 bsc e2 0.863 bsc e 1.95 2.05 2.00 e2 1.05 1.25 1.15 e3 0.65 0.75 0.70 l 0.225 0.325 0.275 z 0.20 bsc z1 0.110 bsc all dimensions in mm suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. u - dfn2020 - 6 (type f) dimensions value (in mm) c 0.650 x 0.400 x1 0.480 x2 0.950 x3 1.700 y 0.425 y1 0.800 y2 1.150 y3 1.450 y4 2.300 d d2 e e b l e2 a a3 seating plane a1 z(4x) e2 e3 d3 z1 pin1 y4 y2 y x c x3 y1 x1 x2 y3
dmp102 2 ufd f d atasheet number: ds 36624 rev. 4 - 2 6 of 6 www.diodes.com may 2015 ? dio des incorporated dm p102 2 uf d f new product important notice d iodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of th is document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or forei gn trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorpo rated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labe ling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible fo r all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support t hat may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or sys tems. copyright ? 201 5 , diodes incorporated www.diodes.com
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